Julien Autebert, Aditya Kashyap, et al.
Langmuir
The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Lawrence Suchow, Norman R. Stemple
JES
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.