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EMC 2001
The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
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SPIE Advanced Lithography 2010
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
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Chemistry of Materials