B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Julien Autebert, Aditya Kashyap, et al.
Langmuir
John G. Long, Peter C. Searson, et al.
JES
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures