The Use of Gas Monitors to Characterize a Low-Temperature Atmospheric-Pressure Epitaxial System

Recent studies have emphasized the need for reduced oxygen and moisture levels in order to achieve Si epitaxy at low temperatures in an atmospheric-pressure system (1, 2). Reduced oxygen and moisture levels are achieved, in part, by the purification of process gases, but careful attention to the details of the gas handling system is also required. Gas monitoring has been useful in measuring the effectiveness of the purification, construction, purging, and wafer loading procedures. Results are presented for an atmospheric-pressure low-temperature selective epitaxy system. In addition, complications that arise when monitoring reactive gases are discussed. © 1991, The Electrochemical Society, Inc. All rights reserved.