Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The existence of defects in amorphous semiconductors is itself an problem of fundamental interest. Conventional approaches accept their existence only phenomenologically. We described a new approach to defining and understanding defects. The existence of defects is a natural outgrowth of our thermodynamical ensemble theory of electronic states in disordered systems. Specific properties are also predicted through properties of thermodynamic ensembles and the relationship between defect electronic properties and structural energies. Thus we obtain directly electronic properties without a need for detailed microscopic information. © 1987.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.A. Barker, D. Henderson, et al.
Molecular Physics
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter