Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The free carrier absorption by electrons in InSb is calculated, for optical mode scattering, in terms of the Kane model. Valence band states are included in the intermediate states. The wavelength dependence is close to λ3. Comparison with experimental data is made and discussed. © 1971.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
John G. Long, Peter C. Searson, et al.
JES
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009