Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
It has been proposed that a harpooning-like silicon-to-O2 electron-transfer process to form an O2 - like precursor is the crucial first step in the oxidation of Si(111). Here we use doping of silicon with boron to reduce the electron population of the silicon-surface adatom dangling bonds. We find that indeed the extent of oxidation and the amount of the O2 - like species on the surface are greatly reduced by the doping. Moreover, we find an analogous suppression of the photo-oxidation process. The latter result indicates that the photodissociation of the same O2 - like precursor is involved in the photoenhancement of the oxidation process. © 1991 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
R. Ghez, J.S. Lew
Journal of Crystal Growth
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science