Veeresh Deshpande, Herwig Hahn, et al.
ESSDERC 2017
Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO 2/1 nm Al 2O 3/1 nm a-Si gate stacks on p-In 0.53Ga 0.47As/InP (001) substrates. Thanks to the presence of the Al 2O 3 barrier layer, a minimum amount of the a-Si passivating layer is oxidized during the whole fabrication process. The capacitors exhibit excellent electrical characteristics with scaled equivalent oxide thickness (EOT) of 0.89 nm and mid-gap interface state density of 5 × 10 11 eV -1 cm -2 upon post-metallization anneal up to 550 °C. Gate-first, self-aligned MOS field-effect-transistors were fabricated with a similar 5 nm HfO 2/1 nm Al 2O 3/1 nm a-Si gate stack and raised source and drain (600 °C for 30 min). Owing to the excellent thermal stability of the stack, no degradation of the gate stack/semiconductor interface is observed, as demonstrated by the excellent capacitance vs voltage characteristics and the good mobility values (peak at 1030 cm 2 V -1 s -1 and 740 cm 2 V -1 s -1 at carrier density of 6.5 × 10 12 cm -2) for a 1.3 nm EOT. © 2012 Crown.
Veeresh Deshpande, Herwig Hahn, et al.
ESSDERC 2017
Giulio Ferraresi, Mario El Kazzi, et al.
ACS Energy Letters
C. B. Zota, Lukas Czornomaz, et al.
Europhysics News
Heinz Schmid, Benedikt F. Mayer, et al.
S3S 2017