Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Measurements of thermoelectric power versus temperature of (CH)x doped with various concentrations of AsF5 are reported. These reflect the semiconductor-metal transition at ∼ 1% doping. The "pristine" thermopower is consistent with the conductivity-derived activation energy of 0.35 eV, and a residual defect/impurity carrier concentration of 0.1%. An analysis of the conductivity based on these data indicates that, while the disorder is certainly important, it is not the cause of the transition. © 1980.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
R. Ghez, J.S. Lew
Journal of Crystal Growth
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME