Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing

The time dependence of the optical reflectivity of Si during pulsed laser annealing at 530 nm has been measured at probe wavelengths 633 and 488 nm. Within experimental error, no difference between the durations of the reflectivity rise at the two wavelengths is observed. This behavior is inconsistent with the assumption that the rise in reflectivity results from a dense electron-hole plasma but is consistent with melting of the Si surface.