Huiling Shang, Marvin H. White, et al.
Applied Physics Letters
In this letter, strong low frequency noise (LFN) reduction is observed when the buried oxide (BOX)/silicon interface of a Schottky junction gated silicon nanowire field-effect transistor (SJGFET) is depleted by a substrate bias. Such LFN reduction is mainly attributed to the dramatic reduction in Coulomb scattering when carriers are pushed away from the interface. The BOX/silicon interface depletion can also be achieved by sidewall Schottky junction gates in a narrow channel SJGFET, leading to an optimal LFN performance without the need of any substrate bias.
Huiling Shang, Marvin H. White, et al.
Applied Physics Letters
Paul Solomon
IEDM 2016
Da Zhang, Indrek Must, et al.
Applied Physics Letters
Yingtao Yu, Si Chen, et al.
IEEE Electron Device Letters