Zhen Zhang, F. Pagette, et al.
IEEE Electron Device Letters
In this letter, strong low frequency noise (LFN) reduction is observed when the buried oxide (BOX)/silicon interface of a Schottky junction gated silicon nanowire field-effect transistor (SJGFET) is depleted by a substrate bias. Such LFN reduction is mainly attributed to the dramatic reduction in Coulomb scattering when carriers are pushed away from the interface. The BOX/silicon interface depletion can also be achieved by sidewall Schottky junction gates in a narrow channel SJGFET, leading to an optimal LFN performance without the need of any substrate bias.
Zhen Zhang, F. Pagette, et al.
IEEE Electron Device Letters
Xi Chen, Si Chen, et al.
ACS Sensors
Paul Solomon, Brian A. Bryce, et al.
E3S 2013
Eduard Cartier, Wanki Kim, et al.
IRPS 2019