T.H. Ning, C.M. Osburn, et al.
Journal of Applied Physics
Paper
TP-A1 Shallow-Level Electron Traps in SiO2
Abstract
No abstract available.
Related
S. Zafar, M. Yang, et al.
VLSI Technology 2005
Conference paper
23 ps/2.1 mW ECL gate
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
Conference paper
A high performance 0.15 μm CMOS
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993