Skip to main content
Research
Focus areas
Blog
Publications
Careers
About
Back
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Back
About
Overview
Labs
People
Back
Semiconductors
Back
Artificial Intelligence
Back
Quantum Computing
Back
Hybrid Cloud
Back
Overview
Back
Labs
Back
People
Research
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Blog
Publications
Careers
About
Overview
Labs
People
Open IBM search field
Close
IEEE T-ED
Paper
01 Jan 1978
TP-B5 Beam-Induced Switching Phenomena in ZnS:Mn BL Memory Devices
View publication
Abstract
No abstract available.
Related
Paper
A simple model for the hysteretic behavior of ZnS:Mn thin film electroluminescent devices
Paper
Increasing electronic display information content: An introduction
Paper
A simple model for the hysteretic behavior of ZnS:Mn thin film electroluminescent devices
Paper
Optical properties of GeTe
View all publications
