H.P. Meier, E. Van Gieson, et al.
Applied Physics Letters
Using a novel single-step molecular beam epitaxy growth technology on nonplanar substrates, we report on the successful integration of an InGaAs / AlGaAs laser amplifier with a 4-mm-long passive waveguide cavity and a QW modula-tor. Lasing action of the entire structure was achieved by a current of 60 mA flowing through the amplifier section. Mode-locking experiments applying an RF signal to the modulator segment led to nearly transform-limited pulses with a duration of 4.4 ps and a time-bandwidth product of 0.43. © 1993 IEEE.
H.P. Meier, E. Van Gieson, et al.
Applied Physics Letters
M. Johnson, U. Maier, et al.
Applied Physics Letters
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986
D.J. Arent, L. Brovelli, et al.
Applied Physics Letters