Conference paper
Model for a 15ns 16K RAM with Josephson junctions
R.F. Broom, P. Gueret, et al.
ISSCC 1978
The barrier height and ideality factor of Ti-Pt contacts on n-type GaAs have been measured in the doping range Nd =3.3×10 16 to 3×1018 cm -3. The flat-band barrier height, determined from capacitance-voltage measurements, is found to be independent of Nd whereas the effective barrier height for current transport, defined by the relation for thermionic emission, decreases rapidly at Nd >1×1018 cm-3. The results agree quite well with thermionic field-emission theory.
R.F. Broom, P. Gueret, et al.
ISSCC 1978
T.T.J.M. Berendschot, H.A.J.M. Reinen, et al.
Applied Physics Letters
P. Guéret, E. Marclay, et al.
Solid State Communications
D.G. Schlom, D. Anselmetti, et al.
Zeitschrift für Physik B Condensed Matter