David B. Mitzi
Journal of Materials Chemistry
Scanning tunneling spectroscopy is used to study p-type Ge(111)c(2X8) surfaces at temperatures between 7 and 61 K and over a wide range of tunnel currents. The spectral feature arising from Ge rest atoms is found to shift in voltage with increasing tunnel current. A comparison of the current dependence of the results with electrostatic computations of tip-induced band bending yields poor agreement. A model is discussed in which the observed shift in the rest-atom state arises from an accumulation of nonequilibrium carriers at the surface.
David B. Mitzi
Journal of Materials Chemistry
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids