M.T. Björk, J. Knoch, et al.
Applied Physics Letters
This Letter focuses on the role of contacts and the influence of Schottky barriers on the switching in nanotransistors. Specifically, we discuss (i) the mechanism for injection from a three-dimensional metal into a low-dimensional semiconductor, i.e., the competition between thermionic emission and thermally assisted tunneling, (ii) the factors that affect tunneling probability with emphasis on the importance of the effective mass for transistor applications, and (iii) a novel approach that enables determination of barrier presence and its actual height. © 2004 The American Physical Society.
M.T. Björk, J. Knoch, et al.
Applied Physics Letters
J. Appenzeller, D.J. Frank
Applied Physics Letters
J. Appenzeller
ECS Meeting 2004
J. Knoch, M. Zhang, et al.
Applied Physics A: Materials Science and Processing