Two-subband screening and transport in (001)silicon inversion layers

Frank Stern

doi:10.1016/0039-6028(78)90490-9

Surface Science

Paper

01 May 1978

Two-subband screening and transport in (001)silicon inversion layers

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Abstract

The effects of occupation of a second subband on screening and on scattering by fixed charges and by interface roughness are estimated for (001)Si inversion layers at low temperatures and at 77 K. © 1978.

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