Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Two-subband screening and transport in (001)silicon inversion layers
Abstract
The effects of occupation of a second subband on screening and on scattering by fixed charges and by interface roughness are estimated for (001)Si inversion layers at low temperatures and at 77 K. © 1978.
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