Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions. © 1998 Elsevier Science Ltd. All rights reserved.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications