Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions. © 1998 Elsevier Science Ltd. All rights reserved.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
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SCML 2024
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Active Matrix Liquid Crystal Displays Technology and Applications 1997