G. Hollinger, Tran Minh Duc, et al.
Physical Review Letters
Evidence for a new class of genuinely localized interface states for Ni, Pt, Al-Si Schottky diodes has been obtained from capacitance-voltage measurements. They are in electrical equilibrium with Si, and have short relaxation times (<10-6 s). They give an exponential contribution to the capacitance which is only weakly sensitive to the silicon surface preparation and exhibits a smooth variation with the nature of the metal. These features are consistent with the existence of a Si conduction band tail in the vicinity of the interface as predicted by Inkson.
G. Hollinger, Tran Minh Duc, et al.
Physical Review Letters
A. Deneuville, M.H. Brodsky
Journal of Applied Physics
A. Deneuville, M.H. Brodsky
Thin Solid Films