Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
The technique of subpicosecond angle‐resolved laser photoemission spectroscopy is described. Investigations of the dynamics of electrons excited into normally unoccupied states at the cleaved GaAs (110) 1 × 1 and Ge (111) 2 × 1 surfaces are detailed. In addition, we discuss experiments carried out on heterostructures formed by the growth of Ge on the cleaved GaAs (110) surface as well as the molecular beam epitaxy (MBE) surface of GaAs (100) and (111). Copyright © 1992 John Wiley & Sons Ltd.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Revanth Kodoru, Atanu Saha, et al.
arXiv
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures