M. Eizenberg, A.C. Callegari, et al.
Applied Physics Letters
The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal-oxide-semiconductor (MOS) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. This indicates that the density of interface states has been reduced to ∼10 11 eV-1 cm-2. The MOS capacitors are found to be stable in air after several months.
M. Eizenberg, A.C. Callegari, et al.
Applied Physics Letters
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
C.D. Tesche, K.H. Brown, et al.
IEEE Transactions on Magnetics
J. Freeouf, D.A. Buchanan, et al.
Applied Physics Letters