Y. Taur, Y. Mii, et al.
IBM J. Res. Dev
The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal-oxide-semiconductor (MOS) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. This indicates that the density of interface states has been reduced to ∼10 11 eV-1 cm-2. The MOS capacitors are found to be stable in air after several months.
Y. Taur, Y. Mii, et al.
IBM J. Res. Dev
A.C. Callegari, D. Lacey, et al.
Solid-State Electronics
D.A. Buchanan, D.J. DiMaria, et al.
Applied Physics Letters
Y. Taur, S. Cohen, et al.
IEDM 1992