Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
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15 results for D. Lacey
Interface engineering for enhanced electron mobilities in W/HfO 2 gate stacks
- A.C. Callegari
- P. Jamison
- et al.
- 2004
- IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
- V. Narayanan
- K. Maitra
- et al.
- 2006
- IEEE Electron Device Letters
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparation
- A.C. Callegari
- P. Jamison
- et al.
- 2005
- ECS Meeting 2005
Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002