Paper

01 Jan 1976

V-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure Lasers

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Abstract

No abstract available.

Paper

Simple Theoretical Estimates of the Schottky Constants and Virtual-Enthalpies of Single Vacancy Formation in Zinc-Blende and Wurtzite Type Semiconductors

J.A. Van Vechten

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Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and Ge

J.A. Van Vechten, C.D. Thurmond

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Comment on "Green's-function calculation of the lattice response near the vacancy in Si"

J.A. Van Vechten

Physical Review B

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I.3 The Effect of Doping on the Degradation of GaAs-Al_xGa_1−xAs Injection Lasers

P.G. McMullin, J.M. Blum, et al.

IEEE JQE

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