Paper

01 Jan 1976

V-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure Lasers

View publication

Abstract

No abstract available.

Related

Paper

Effect of reconstruction of a semiconductor surface on the crystal growth

Paper

Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?

Paper

Comment on "Green's-function calculation of the lattice response near the vacancy in Si"

Paper

Asymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: Role of the kinetic energy

View all publications