X. Yin, H.-M. Chen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Volatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxy
Abstract
A model is presented which relates the observed effects of substrate temperature and growth flux magnitudes upon layer quality to the presence of volatile oxides and the thermodynamics of the formation of nonvolatile oxides on the growth surface. A means for reducing oxide contamination is presented and the consequent benefits explored.