Yahya Tousi, Alberto Valdes-Garcia
RFIC 2016
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Yahya Tousi, Alberto Valdes-Garcia
RFIC 2016
Aaron D. Franklin, Mathieu Luisier, et al.
Nano Letters
Zhihong Chen, Joerg Appenzeller, et al.
Science
Shu-Jen Han, Shan Wang
JALA - Journal of the Association for Laboratory Automation