Wooram Lee, Caglar Ozdag, et al.
CSICS 2017
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Wooram Lee, Caglar Ozdag, et al.
CSICS 2017
Yu-Ming Lin, Joerg Appenzeller, et al.
Nano Letters
Amal Kasry, Ali A. Afzali, et al.
Chemistry of Materials
Bodhisatwa Sadhu, John F. Bulzacchelli, et al.
RFIC 2016