Jean-Olivier Plouchart, Benjamin Parker, et al.
IEEE Design and Test
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Jean-Olivier Plouchart, Benjamin Parker, et al.
IEEE Design and Test
Bodhisatwa Sadhu, Arun Paidimarri, et al.
IEEE JSSC
Alberto Valdes-Garcia, Radhika Venkatasubramanian, et al.
IEEE Trans. Instrum. Meas.
Yu-Ming Lin, Christos Dimitrakopoulos, et al.
Applied Physics Letters