Electronics Letters

Paper

03 Apr 2003

Wideband CMOS transimpedance amplifier

View publication

Abstract

A fully differential wideband CMOS transimpedance amplifier is presented. Simulation results of different inductive peaking configurations are shown. Measured performances give a 19 GHz bandwidth and 45 dBΩ transimpedance gain at 6.5 mW power consumption.

Paper

Polarization-Independent photodetectors with enhanced responsivity in a standard silicon-on-insulator complementary metal-oxide-semiconductor process

N. Moll, T. Morf, et al.

Journal of Lightwave Technology

Paper

Low-jitter 10 GHz multiphase PLL in 90 nm CMOS

M. Kossel, P. Buchmann, et al.

Electronics Letters

Paper

Wide tuning range LC-oscillator in 65nm SOI CMOS, based on switchable secondary inductor

T. Morf, M. Kossel, et al.

Electronics Letters

Conference paper

A 40 Gb/s optical receiver in 80-nm CMOS for short-distance high-density interconnects

C. Kromer, G. Sialm, et al.

A-SSCC 2006

View all publications