E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
Schottky gates for self-aligned GaAs metal semiconductor field-effect transistors (MESFETs) have been formed by dc magnetron sputtering of WSi 0.11 onto sputter-cleaned GaAs surfaces. The WSi0.11/GaAs diodes showed good current-voltage and capacitance-voltage characteristics after annealing at 800 °C. Schottky barrier heights measured by current-voltage were φI-VB ≅0.73 eV with an ideality factor n≅1.14 for large diodes and φI-VB ≅0.67 eV with n≅1.3 for 1×10 μm gates without a self-aligned n+ implant. The n+ self-aligned implant was found to cause leakage current, which was interpreted as a parallel small-area, low-barrier diode at the gate edge. FETs formed with this gate material showed good threshold voltage uniformity with a standard deviation as low as 31 mV for 1 μm enhancement-mode FETs and 49 mV for 1 μm depletion-mode FETs on a 51-mm wafer.
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
C.D. Tesche, K.H. Brown, et al.
International Conference on Low Temperature Physics (LT) 1983
R. Jammy, V. Narayanan, et al.
ISTC 2005