WSi0.11 Schottky gates for GaAs metal semiconductor field-effect transistors
- A.C. Callegari
- G.D. Spiers
- et al.
- 1987
- Journal of Applied Physics
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Characterization of GaAs self-aligned refractory-gate metal-semiconductor field-effect transistor (MESFET) integrated circuits
- J.H. Magerlein
- D.J. Webb
- et al.
- 1987
- Journal of Applied Physics
Effect of interface states on the electrical properties of W, WSi x, and WAlx Schottky contacts on GaAs
- A.C. Callegari
- D. Ralph
- et al.
- 1987
- Journal of Applied Physics