Probing the transition layer at the SiO2-Si interface using core level photoemission
- G. Hollinger
- F.J. Himpsel
- 1984
- Applied Physics Letters
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22 results for G. Hollinger
Determination of the Fermi-level pinning position at Si(111) surfaces
- F.J. Himpsel
- G. Hollinger
- et al.
- 1983
- Physical Review B
Multiple-bonding configurations for oxygen on silicon surfaces
- G. Hollinger
- F.J. Himpsel
- 1983
- Physical Review B
Electronic structure of Si(111) surfaces
- F.J. Himpsel
- Th. Fauster
- et al.
- 1983
- Surface Science
Itinerant-5f-electron antiferromagnetism in uranium nitride: A temperature-dependent angle-resolved photoemission study
- B. Reihl
- G. Hollinger
- et al.
- 1983
- Physical Review B
Chemisorption of H2O on Si(100)
- D. Schmeisser
- F.J. Himpsel
- et al.
- 1983
- Physical Review B
Integer versus noninteger valence properties revealed by a comparative photoemission study of NaxWO3 and ReO3
- G. Hollinger
- F.J. Himpsel
- et al.
- 1983
- Physical Review B
Electronic structure of hydrogen-bonded H2O
- D. Schmeisser
- F.J. Himpsel
- et al.
- 1983
- Physical Review B
Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfaces
- G. Hollinger
- F.J. Himpsel
- 1983
- JVSTA
Schottky barrier formation at Pd, Pt, and Ni/Si(111) interfaces
- R.J. Purtell
- G. Hollinger
- et al.
- 1983
- JVSTA