(100) and (111) Ni films epitaxially grown on Cu by the metal-metal epitaxy on silicon technique near room temperatures
- Chin-An Chang
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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119 results for Chin-An Chang
Carbon as a barrier for the outdiffusion of Cu
- Chin-An Chang
- D.S. Yee
- et al.
- 1989
- Applied Physics Letters
Formation of palladium silicide in the presence of Al with and without a carbon barrier layer
- Chin-An Chang
- 1989
- Applied Physics Letters
Novel method of patterning YBaCuO superconducting thin films
- Q.Y. Ma
- E.S. Yang
- et al.
- 1989
- Applied Physics Letters
Thermal stability of the Cu/Pd/Si metallurgy
- Chin-An Chang
- 1989
- Applied Physics Letters
Outdiffusion of Cu through Au: Comparison of (100) and (111) Cu films epitaxially deposited on Si, and effects of annealing ambients
- Chin-An Chang
- 1989
- Applied Physics Letters
Formation of PtSi in the presence of Al and a Cr barrier layer
- Chin-An Chang
- 1989
- Journal of Applied Physics
Interdiffusion between Si substrates and YBaCuO films
- Q.Y. Ma
- X. Wu
- et al.
- 1989
- Physica C: Superconductivity and its applications
Rapid thermal annealing of YBaCuO thin films deposited on SiO2 substrates
- Q.Y. Ma
- E.S. Yang
- et al.
- 1989
- Journal of Applied Physics
Reduced Al/PtSi reaction up to 600°C using an amorphous carbon barrier layer
- Chin-An Chang
- 1989
- Journal of Applied Physics