Bistable conditions for low-temperature silicon epitaxy
- Bernard S. Meyerson
- Franz J. Himpsel
- et al.
- 1990
- Applied Physics Letters
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218 results for F.J. Himpsel
Electronic structure of Si(111)-B(s3 × s3) R30°studied by Si 2p and B 1s core-level photoelectron spectroscopy
- A.B. McLean
- L.J. Terminello
- et al.
- 1990
- Physical Review B
Electronic states due to surface doping: Si(111)3×3B
- Efthimios Kaxiras
- K.C. Pandey
- et al.
- 1990
- Physical Review B
Si2Cl6and Si2H6adsorption on CaF2/Si(111)
- L.J. Terminello
- F.J. Himpsel
- et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Bonding at silicon/insulator interfaces
- F.J. Himpsel
- T.F. Heinz
- et al.
- 1990
- Applied Surface Science
Inverse photoemission from semiconductors
- F.J. Himpsel
- 1990
- Surface Science Reports
Oxidation studies of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Journal of Applied Physics
Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface
- A.B. McLean
- F.J. Himpsel
- 1989
- Physical Review B
Electronic transitions at the CaF2/Si(111) interface probed by resonant three-wave mixing spectroscopy
- T.F. Heinz
- F.J. Himpsel
- et al.
- 1989
- Physical Review Letters
Empty states near the Fermi level in Bi2Sr2CaCu2O8
- W. Drube
- F.J. Himpsel
- et al.
- 1989
- Physical Review B