Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics
- Bomsoo Kim
- Dong-Il Bae
- et al.
- 2013
- IEEE Electron Device Letters
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86 results for Phil Oldiges
A comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
Optimal UTB FD/SOI device structure using thin BOX for sub-50-nm SRAM design
- Saibal Mukhopadhyay
- Keunwoo Kim
- et al.
- 2006
- IEEE Electron Device Letters
Impact of heater configuration on Reset characteristics of PCM Mushroom cell
- Anirban Chandra
- Phil Oldiges
- et al.
- 2019
- ANTS 2019
Technique for Asymmetric Source/Drain Resistance Extraction on a Single Gate Length MOSFET
- Phil Oldiges
- Chen Zhang
- et al.
- 2018
- SISPAD 2018
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies
- Harold Hughes
- Patrick McMarr
- et al.
- 2015
- REDW/NSREC 2015
Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond
- Seong-Dong Kim
- Michael Guillorn
- et al.
- 2015
- S3S 2015
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- Tenko Yamashita
- S. Mehta
- et al.
- 2015
- VLSI Technology 2015