CONFORMATIONALLY LOCKED ORGANOSILANE HIGH POLYMERS.
- R.D. Miller
- D. Hofer
- et al.
- 1984
- ACS National Meeting 1984
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54 results for Donald C. Hofer
Polysilane Bilayer UV Lithography
- Donald C. Hofer
- Robert D. Miller
- et al.
- 1989
- Proceedings of SPIE 1989
Contrast enhanced UV lithography with polysilanes
- Donald C. Hofer
- Robert D. Miller
- et al.
- 1984
- Microlithography 1984
Characterization of the induction effect at mid-ultraviolet exposure: Application to AZ2400 at 313 nm
- Donald C. Hofer
- Grant Willson
- et al.
- 1989
- Proceedings of SPIE 1989
Cyclic olefm resist polymers and polymerizations for improved etch resistance
- R.D. Allen
- Juliann Opitz
- et al.
- 1999
- J. Photopolym. Sci. Tech.
IBM 193nm semiconductor resist: Material properties, resist characteristics and lithographic performance
- P. Rao Varanasi
- Ann Marie Mewherter
- et al.
- 1999
- J. Photopolym. Sci. Tech.
Platform-dependent properties of 193nm single layer resists
- Robert D. Allen
- Thomas I. Wallow
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
The influence of photoacid structure on the design and performance of 193-nm resists
- Robert D. Allen
- Juliann Opitz
- et al.
- 1997
- J. Photopolym. Sci. Tech.
Progress in 193 nm positive resists
- R.D. Allen
- R. Soortyakumaran
- et al.
- 1996
- J. Photopolym. Sci. Tech.