Properties of tungsten silicide film on polycrystalline silicon
- M.Y. Tsai
- F.M. D'Heurle
- et al.
- 1981
- Journal of Applied Physics
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A 34&181;m2DRAM cell fabricated with a 1&181;m single-level polycide FET technology
- Hu H. Chao
- Robert H. Dermard
- et al.
- 1981
- ISSCC 1981
A 34 µ m2 DRAM Cell Fabricated with a 1 µm Single-Level Polycide FET Technology
- Hu H. Chao
- Robert H. Dennard
- et al.
- 1981
- IEEE Journal of Solid-State Circuits