Comparison of annealing and ion implantation effects during solid state disilicide formation
- F.M. D'Heurle
- M.Y. Tsai
- et al.
- 1982
- Journal of Applied Physics
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Properties of tungsten silicide film on polycrystalline silicon
- M.Y. Tsai
- F.M. D'Heurle
- et al.
- 1981
- Journal of Applied Physics
A 34 µ m2 DRAM Cell Fabricated with a 1 µm Single-Level Polycide FET Technology
- Hu H. Chao
- Robert H. Dennard
- et al.
- 1981
- IEEE Journal of Solid-State Circuits