A 34&181;m2DRAM cell fabricated with a 1&181;m single-level polycide FET technology
- Hu H. Chao
- Robert H. Dermard
- et al.
- 1981
- ISSCC 1981
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13 results for M.Y. Tsai
SPECIAL FUNCTION UNIT FOR THE MICRO/370 MICROPROCESSOR.
- C.A. Trempel
- R.W. Hadsell
- et al.
- 1985
- ICCD 1985
CLOCK GENERATOR WITH FINITE STATE MACHINE OPTIMIZATION.
- Shauchi Ong
- M.Y. Tsai
- et al.
- 1985
- ICCD 1985
One-Micron Polycide (WSI2 on Poly-Si) MOSFET Technology
- M.Y. Tsai
- H.H. Chao
- et al.
- 2019
- JES
Refractory metal silicide formation induced by As+ implantation
- M.Y. Tsai
- C.S. Petersson
- et al.
- 2008
- Applied Physics Letters
Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effects
- F.M. d'Heurle
- C.S. Petersson
- et al.
- 2008
- Journal of Applied Physics
Shallow junctions by high-dose As implants in Si: Experiments and modeling
- M.Y. Tsai
- F.F. Morehead
- et al.
- 2008
- Journal of Applied Physics
Designing the Micro / 370
- H.H. Chao
- Shauchi Ong
- et al.
- 1987
- IEEE Design and Test of Computers
Micro/370: A 32-bit Single-Chip Microprocessor
- Hu H. Chao
- Feng-Hsien W. Shih
- et al.
- 1986
- IEEE Journal of Solid-State Circuits
Growth "kinetics" and growth mechanisms for disilicide layers obtained through implantation
- F.M. D'Heurle
- C.S. Petersson
- et al.
- 1982
- Journal of Applied Physics