Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics
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71 results for Mordehai Heiblum
High-magnetic-field transport in a dilute two-dimensional electron gas
- E. Mendez
- M. Heiblum
- et al.
- 1983
- Physical Review B
PERSISTENT PHOTOCONDUCTIVITY IN AlGaAs-GaAs HETEROSTRUCTURES.
- M.I. Nathan
- M. Heiblum
- et al.
- 1983
- Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Oxidation processes using ion beams
- A.W. Kleinsasser
- J.M.E. Harper
- et al.
- 1982
- Thin Solid Films
IVB-12 Novel Ohmic Contacts to n-Type GaAs
- M.I. Nathan
- M. Heiblum
- 1982
- IEEE T-ED
Characteristics of AuGeNi ohmic contacts to GaAs
- M. Heiblum
- M.I. Nathan
- et al.
- 1982
- Solid-State Electronics
An improved AuGe ohmic contact to n-GaAs
- Marshall I. Nathan
- Mordehai Heiblum
- 1982
- Solid-State Electronics
Ion beam oxidation
- J.M.E. Harper
- M. Heiblum
- et al.
- 1981
- Journal of Applied Physics
Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface
- Chin-An Chang
- M. Heiblum
- et al.
- 1981
- Applied Physics Letters
IVA-6 Characteristics of AuGeNi Ohmic Contacts to GaAs
- M. Heiblum
- M.I. Nathan
- et al.
- 1981
- IEEE T-ED