Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Physical Review B
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69 results for P.D. Kirchner
Role of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1992
- Physical Review B
Photoreflectance study of the surface Fermi level at (001) n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters
Formation of two-dimensional arsenic-precipitate arrays in GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
Impact of surface processing on Al/GaAs(100) interface states
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Solid State Communications
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
High-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters