Hole transport in p-channel Si MOSFETs
- Santhosh Krishnan
- Dragica Vasileska
- et al.
- 2005
- Microelectronics Journal
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102 results for Massimo V. Fischetti
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and to mainstream VLSI technology
- Massimo V. Fischetti
- Steven E. Laux
- et al.
- 2004
- IWCE 2004
Ballistic FET modeling using QDAME: Quantum device analysis by modal evaluation
- Steven E. Laux
- Arvind Kumar
- et al.
- 2002
- IEEE TNANO
Hot-carrier charge trapping and reliability in high-K dielectrics
- Arvind Kumar
- Tak H. Ning
- et al.
- 2002
- VLSI Technology 2002
Long-range coulomb interactions in small silicon devices: Transconductance and mobility degradation
- M.V. Fischetti
- S.E. Laux
- 2000
- MSM 2000
A master equation approach to the simulation of electron transport in small semiconductor devices
- M.V. Fischetti
- 1998
- IWCE 1998
Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
- N. Sano
- M.V. Fischetti
- et al.
- 1998
- IWCE 1998
Monte Carlo simulation of electron transport in Si: The first 20 years
- M.V. Fischetti
- S.E. Laux
- 1996
- ESSDERC 1996
Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs
- M.V. Fischetti
- N. Sano
- et al.
- 1996
- SISPAD 1996
Transport models for advanced device simulation - truth or consequences?
- S.E. Laux
- M.V. Fischetti
- 1995
- BCTM 1995