Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: The role of remote phonon scattering
- Massimo V. Fischetti
- Deborah A. Neumayer
- et al.
- 2001
- Journal of Applied Physics
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102 results for Massimo V. Fischetti
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies
- J.C. Tsang
- M.V. Fischetti
- 2001
- Microelectronics Reliability
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
- F. Gamiz
- M.V. Fischetti
- 2001
- Journal of Applied Physics
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
- Cristian Rivas
- Roger Lake
- et al.
- 2001
- Applied Physics Letters
Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
- M.V. Fischetti
- S.E. Laux
- 2001
- Journal of Applied Physics
Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
- M.V. Fischetti
- 2001
- Journal of Applied Physics
Long-range coulomb interactions in small silicon devices: Transconductance and mobility degradation
- M.V. Fischetti
- S.E. Laux
- 2000
- MSM 2000
Performance degradation of small silicon devices caused by long-range Coulomb interactions
- M.V. Fischetti
- S.E. Laux
- 2000
- Applied Physics Letters
Issues in modeling small devices
- S.E. Laux
- M.V. Fischetti
- 1999
- IEDM 1999