S. Guha, N.A. Bojarczuk, et al.
IEE/LEOS Summer Topical Meetings 1997
High-effective mobilities are demonstrated in Al2O3 based n-channel MOSFETs with Al gates. The Al2O3 was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm2/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.
S. Guha, N.A. Bojarczuk, et al.
IEE/LEOS Summer Topical Meetings 1997
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
L.Å. Ragnarsson, S. Guha, et al.
Applied Physics Letters
L.Å. Ragnarsson, N.A. Bojarczuk, et al.
IEEE Electron Device Letters