R. Jammy, V. Narayanan, et al.
ISTC 2005
Paper
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
Abstract
High-effective mobilities are demonstrated in Al2O3 based n-channel MOSFETs with Al gates. The Al2O3 was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm2/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.
Related
M. Copel, S. Guha, et al.
Applied Physics Letters
Conference paper
Effect of surface nitridation on the Ge/HfO2 interface
R. Garg, D. Misra, et al.
ECS Meeting 2005
Conference paper
Gallium nitride based LEDs on silicon substrates
N.A. Bojarczuk, S. Guha
Proceedings of SPIE - The International Society for Optical Engineering