IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
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102 results for Massimo V. Fischetti
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
- D.J. Frank
- S.E. Laux
- et al.
- 1992
- IEDM 1992
Monte carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1992
- IEDM 1992
Effect of the electron-plasmon interaction on the electron mobility in silicon
- M.V. Fischetti
- 1991
- Physical Review B
Coulombic and neutral trapping centers in silicon dioxide
- D.A. Buchanan
- M.V. Fischetti
- et al.
- 1991
- Physical Review B
Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part II: Submicrometer MOSFET's
- Massimo V. Fischetti
- Steven E. Laux
- 1991
- IEEE T-ED
Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part I Homogeneous Transport
- Massimo V. Fischetti
- 1991
- IEEE T-ED
The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors
- E.F. Crabbe
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Overshoot in transient and steady-state in GaAs, InP, Ga.47In.53As, and InAs bipolar transistors
- S. Tiwari
- M.V. Fischetti
- et al.
- 1990
- IEDM 1990
Non-avalanche dielectric breakdown in wide-band-gap insulators at DC and optical frequencies
- P. Braunlich
- S.C. Jones
- et al.
- 1989
- SPIE Laser-Induced Damage in Optical Materials 1989