ReviewSix-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thicknessM.V. Fischetti, Z. Ren, et al.Journal of Applied Physics
Conference paperOvershoot in transient and steady-state in GaAs, InP, Ga.47In.53As, and InAs bipolar transistorsS. Tiwari, M.V. Fischetti, et al.IEDM 1990
PaperQuasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructureS.E. Laux, D.J. Frank, et al.Surface Science
PaperSoft-x-ray induced core-level photoemission as a probe of hot-electron dynamics in SiO2F.R. McFeely, E. Cartier, et al.Physical Review Letters