Determination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
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88 results for T.F. Kuech
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Applied Physics Letters
Dynamics and transport of excitons confined at high-quality GaAs/AlxGa1-xAs interfaces
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Gallium Arsenide and Related Compounds 1991
Interface-free GaAs structures. From bulk to the quantum limit
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Gallium Arsenide and Related Compounds 1991
Optically determined low-temperature, high-mobility transport in 'interface-free' GaAs heterostructures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Gallium Arsenide and Related Compounds 1991
Intrinsic, heterointerface excitonic states in GaAs(n)/Al0.3Ga0.7As(p) double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Intrinsic recombination and interface characterization in "surface-free" GaAs structures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs and AlxGa1-xAs with x0.35
- E.R. Glaser
- T.A. Kennedy
- et al.
- 1991
- Physical Review B
Quantum-confined excitonic states at high-quality interfaces in GaAs(n type)/AlxGa1-xAs(p type) double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Physical Review B