Evolution of sn environment in algaas alloys
- J. Pant
- K. Pansewicz
- et al.
- 1993
- Japanese Journal of Applied Physics
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88 results for T.F. Kuech
Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Crystal Growth
Simulation of carbon doping of GaAs during MOVPE
- Maurizio Masi
- Harsono Simka
- et al.
- 1992
- Journal of Crystal Growth
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth
Lattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga1-xAlxAs
- G.S. Cargill III
- A. Segmüller
- et al.
- 1992
- Physical Review B
Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Electronic Materials
An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures
- L.C. Wang
- X.Z. Wang
- et al.
- 1991
- Journal of Applied Physics
Determination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Applied Physics Letters
Long-range, minority-carrier transport in high quality "surface- free" GaAs/AlGaAs double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Applied Physics Letters