Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
- T.F. Kuech
- M.A. Tischler
- et al.
- 1990
- Journal of Crystal Growth
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88 results for T.F. Kuech
Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Applied Physics Letters
Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)
- Ming L. Yu
- Ulrich Memmert
- et al.
- 1989
- Applied Physics Letters
The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- L.S. Yu
- L.C. Wang
- et al.
- 1989
- Journal of Applied Physics
Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa 1-xAs (0≤x≤0.3)
- E.D. Marshall
- L.S. Yu
- et al.
- 1989
- Applied Physics Letters
Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy
- M.A. Tischler
- T.F. Kuech
- et al.
- 1989
- Applied Physics Letters
Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
Velocity-field characteristics of electrons in doped GaAs
- W.Ted Masselink
- Thomas F. Kuech
- 1989
- Journal of Electronic Materials
Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs
- P.M. Mooney
- W. Wilkening
- et al.
- 1989
- Physical Review B