Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
- T.F. Kuech
- M.A. Tischler
- et al.
- 1990
- Journal of Crystal Growth
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
88 results for T.F. Kuech
Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Applied Physics Letters
Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)
- Ming L. Yu
- Ulrich Memmert
- et al.
- 1989
- Applied Physics Letters
The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- L.S. Yu
- L.C. Wang
- et al.
- 1989
- Journal of Applied Physics
Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa 1-xAs (0≤x≤0.3)
- E.D. Marshall
- L.S. Yu
- et al.
- 1989
- Applied Physics Letters
Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy
- M.A. Tischler
- T.F. Kuech
- et al.
- 1989
- Applied Physics Letters
Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
Velocity-field characteristics of electrons in doped GaAs
- W.Ted Masselink
- Thomas F. Kuech
- 1989
- Journal of Electronic Materials
Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs
- P.M. Mooney
- W. Wilkening
- et al.
- 1989
- Physical Review B