The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- L.S. Yu
- L.C. Wang
- et al.
- 1989
- Journal of Applied Physics
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88 results for T.F. Kuech
Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Applied Physics Letters
Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy
- M.A. Tischler
- T.F. Kuech
- et al.
- 1989
- Applied Physics Letters
Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE
- P. Solomon
- A. Palevski
- et al.
- 1989
- IEDM 1989
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
Velocity-field characteristics of electrons in doped GaAs
- W.Ted Masselink
- Thomas F. Kuech
- 1989
- Journal of Electronic Materials
Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs
- P.M. Mooney
- W. Wilkening
- et al.
- 1989
- Physical Review B
Compensation mechanisms in n+-GaAs doped with sulphur
- R. Venkatasubramanian
- S.K. Ghandhi
- et al.
- 1989
- Journal of Crystal Growth
Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Applied Physics
Localization and wave-vector conservation for optical phonons in AlxGa1-xAs and thin layers of GaAs
- J.A. Kash
- J.M. Hvam
- et al.
- 1988
- Physical Review B