Nonequilibrium boron doping effects in low-temperature epitaxial silicon films
- B.S. Meyerson
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
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138 results for B.S. Meyerson
Oxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters
Inhomogeneous carbon bonding in hydrogenated amorphous carbon films
- A. Grill
- B.S. Meyerson
- et al.
- 1987
- Journal of Applied Physics
Silane pyrolysis rates for the modeling of chemical vapor deposition
- Bernard S. Meyerson
- Joseph M. Jasinski
- 1987
- Journal of Applied Physics
EXPERIMENTAL AND CHEMICAL KINETIC MODELLING STUDY OF SILICON CVD FROM MONOSILANE AND DISILANE.
- B.S. Meyerson
- B.A. Scott
- et al.
- 1986
- Chemtronics
Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
- B.S. Meyerson
- 1986
- Applied Physics Letters Applied Physics Letters
Doping reaction of PH3 and B2H6 with Si(100)
- Ming L. Yu
- D.J. Vitkavage
- et al.
- 1986
- Journal of Applied Physics
CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985
Summary Abstract: Comparison between the adsorption of PH3 and B2H6 on Si surfaces as related to the CVD of Si
- M.L. Yu
- D.J. Vitkavage
- et al.
- 1985
- JVSTA
Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
- T.F. Kuech
- B.S. Meyerson
- et al.
- 1984
- Applied Physics Letters