Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
- B.S. Meyerson
- 1986
- Applied Physics Letters Applied Physics Letters
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138 results for B.S. Meyerson
EXPERIMENTAL AND CHEMICAL KINETIC MODELLING STUDY OF SILICON CVD FROM MONOSILANE AND DISILANE.
- B.S. Meyerson
- B.A. Scott
- et al.
- 1986
- Chemtronics
Summary Abstract: Comparison between the adsorption of PH3 and B2H6 on Si surfaces as related to the CVD of Si
- M.L. Yu
- D.J. Vitkavage
- et al.
- 1985
- JVSTA
Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
- T.F. Kuech
- B.S. Meyerson
- et al.
- 1984
- Applied Physics Letters
Silicon doping of GaAs and AlxGa1-xAs using disilane in metalorganic chemical vapor deposition
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Journal of Crystal Growth
The Adsorption of PH3 on Si(100) and its Effect on the Coadsorption of SiH4
- Ming L. Yu
- B.S. Meyerson
- 1984
- JVSTA
The preparation of in situ doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition
- B.S. Meyerson
- B.A. Scott
- et al.
- 1983
- Journal of Applied Physics
Homogeneous chemical vapor deposition of amorphous semiconductor thin films
- B.A. Scott
- W.L. Olbricht
- et al.
- 1983
- Journal of Non-Crystalline Solids