Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- I. Adesida
- M. Arafa
- et al.
- 1997
- Microelectronic Engineering
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138 results for B.S. Meyerson
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- M. Arafa
- K. Ismail
- et al.
- 1996
- IEEE Electron Device Letters
A Si-Ge HBT technology for the wireless marketplace
- D. Ahlgren
- D.A. Sunderland
- et al.
- 1996
- ESSDERC 1996
DC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si-Si1-xGex heterostructures
- R.B. Dunford
- R. Newbury
- et al.
- 1996
- Surface Science
High speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications
- D. Nguyen-Ngoc
- D.A. Sunderland
- et al.
- 1996
- Applied Surface Science
Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields
- R.G. Clark
- R.B. Dunford
- et al.
- 1996
- Physica B: Condensed Matter
Si-Ge heterojunction bipolar technology for high-speed integrated circuits
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- Canadian Journal of Physics
Si/SiGe quantum wells: fundamentals to technology
- K. Ismail
- B.S. Meyerson
- 1995
- Journal of Materials Science: Materials in Electronics