POST OXIDATION ANNEAL AND RE-OXIDATION EFFECTS IN 5 nm SiO//2 FILMS.
- L. Dori
- M. Arienzo
- et al.
- 1986
- MRS Fall Meeting 1986
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32 results for M. Arienzo
LPCVD IN-SITU ARSENIC DOPED POLYSILICON FOR VLSI APPLICATIONS.
- M. Arienzo
- A.C. Megdanis
- et al.
- 1984
- IEDM 1984
Heavily Doped Polysilicon-Contact Solar Cells
- F.A. Lindholm
- A. Neugroschel
- et al.
- 1985
- IEEE Electron Device Letters
Characterization of Non-Ohmic Behavior of Emitter Contacts of Bipolar Transistors
- B. Ricco
- J.M.C. Stork
- et al.
- 1984
- IEEE Electron Device Letters
Design considerations for high-density high-speed bipolar ROM
- Pong-Fei Lu
- Hyun J. Shin
- et al.
- 1993
- VLSI-TSA 1993
SiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
Electrical characterization of polysilicon/monosilicon interfaces
- S. Bellone
- P. Spirito
- et al.
- 1987
- ESSDERC 1987
Trapping properties of very thin nitride/oxide gate insulators
- J.Y.-C. Sun
- M. Arienzo
- et al.
- 1987
- ESSDERC 1987
POLYSILICON EMITTER RESISTANCE AND CARRIER TRANSPORT STUDIES.
- J.M.C. Stork
- C.Y. Wong
- et al.
- 1984
- VLSI Technology 1984