Avalanche Electron Injection in 4-nm Si3N4/8-nm SiO2 Dielectric Structure: Turn-Around Phenomenon and Si-SiO2 Interface Degradation
- Leonello Dori
- Maurizio Severi
- et al.
- 1990
- IEEE T-ED
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32 results for M. Arienzo
Effect of heat treatments on the electrical resistivity of Sb-doped amorphous Si films deposited by molecular beam on (100) Si
- Y. Komem
- M. Arienzo
- et al.
- 1989
- Applied Physics Letters
POST OXIDATION ANNEAL AND RE-OXIDATION EFFECTS IN 5 nm SiO//2 FILMS.
- L. Dori
- M. Arienzo
- et al.
- 1986
- MRS Fall Meeting 1986
Electrical characterization of polysilicon/monosilicon interfaces
- S. Bellone
- P. Spirito
- et al.
- 1987
- ESSDERC 1987
Trapping properties of very thin nitride/oxide gate insulators
- J.Y.-C. Sun
- M. Arienzo
- et al.
- 1987
- ESSDERC 1987
Electrical characteristics of diodes fabricated in selective-epitaxial silicon wells
- David Harame
- Barry Ginsberg
- et al.
- 1987
- Solid State Electronics
Electron avalanche injection on 10-nm dielectric films
- Leonello Dori
- Maurizio Arienzo
- et al.
- 1987
- Journal of Applied Physics
A Permeable-Base Switching Device Using Stacked Layers of Silicon, Silicon Dioxide, and Silicon-Rich Silicon Dioxide
- D.J. Dimaria
- Maurizio Arienzo
- 1987
- IEEE T-ED
Electron heating studies in silicon dioxide: Low fields and thick films
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
Effect of post-oxidation anneal on ultrathin SiO2 gate oxides
- Maurizio Arienzo
- Leonello Dori
- et al.
- 1986
- Applied Physics Letters