INCREASING THE CURRENT DRIVING CAPABILITY OF EPITAXIAL SCHOTTKY BARRIER DIODES USING HIGH-ENERGY IMPLANTATION.
- C.T. Chuang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
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32 results for M. Arienzo
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
- B.J. Ginsberg
- M. Arienzo
- et al.
- 1983
- ECS Meeting 1983
Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature
- J.P. Conde
- K.K. Chan
- et al.
- 1993
- Journal of Applied Physics
Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement
- J.P. Conde
- K.K. Chan
- et al.
- 1992
- Journal of Applied Physics
The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge
- J.P. Conde
- K.K. Chan
- et al.
- 1992
- Journal of Applied Physics
Thin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopy
- L. Dori
- J. Bruley
- et al.
- 1991
- Journal of Applied Physics
SiGe alloys: growth, properties and applications
- Maurizio Arienzo
- Subramanian S. Iyer
- et al.
- 1991
- Applied Surface Science
Low-temperature silicon cleaning via hydrogen passivation and conditions for epitaxy
- Subramanian S. Iyer
- M. Arienzo
- et al.
- 1990
- Applied Physics Letters
Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology
- L. Dori
- A.C. Megdanis
- et al.
- 1990
- Thin Solid Films
Avalanche Electron Injection in 4-nm Si3N4/8-nm SiO2 Dielectric Structure: Turn-Around Phenomenon and Si-SiO2 Interface Degradation
- Leonello Dori
- Maurizio Severi
- et al.
- 1990
- IEEE T-ED