ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
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6 results for R. Kalish
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- VLSI Science and Technology 1983
SHORT TIME ANNEALING OF As AND B ION IMPLANTED Si USING TUNGSTEN-HALOGEN LAMPS.
- T.O. Sedgwick
- R. Kalish
- et al.
- 1983
- MRS Proceedings 1983
Silicon loss and transient etch rate in selective reactive ion etching of oxide overlayers
- G.S. Oehrlein
- R. Kalish
- 1989
- Applied Physics Letters
Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- R. Kalish
- G.S. Oehrlein
- et al.
- 1985
- Nuclear Inst. and Methods in Physics Research, B
Transient enhanced diffusion in arsenic-implanted short time annealed silicon
- R. Kalish
- T.O. Sedgwick
- et al.
- 1984
- Applied Physics Letters