ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.

Abstract

Boron and arsenic ion implanted silicon samples have been Short Time Annealed (STA) in a tungsten-halogen lamp heater for times of a few seconds. The dopant profiles all show a motion of 100-800A. The boron dopant profiles exhibit an initial rapid transient diffusion which is complete within approximately 1 sec and which appears to be both time and temperature independent over a wide range. The arsenic studies which are incomplete at this time show a temperature dependent diffusion. Several techniques are described for reliable temperature measurement and control in STA systems.