SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
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90 results for Jack Y. C. Sun
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
35 GHz/35 psec ECL pnp technology
- J. Warnock
- P.F. Lu
- et al.
- 1990
- IEDM 1990
Low temperature operation of Si and SiGe bipolar transistors
- E.F. Crabbe
- G.L. Patton
- et al.
- 1990
- IEDM 1990
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
Doping of n+ and p+ polysilicon in a dual-gate CMOS process
- C.Y. Wong
- J.Y.-C. Sun
- et al.
- 1988
- IEDM 1988
0. 5- mu M-CHANNEL CMOS TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN-TEMPERATURE OPERATION.
- J.Y.-C. Sun
- Y. Taur
- et al.
- 1985
- IEDM 1985
History dependence of output characteristics of silicon-on-insulator (SOI) MOSFET's
- Keith A. Jenkins
- J.Y.-C. Sun
- et al.
- 1996
- IEEE Electron Device Letters
Measurement of I—V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating
- Keith A. Jenkins
- J.Y.-C. Sun
- 1995
- IEEE Electron Device Letters